Transforming XML file: NeuroMLFiles/Examples/ChannelML/NaChannel_oldFormat.xml using XSL file: NeuroMLFiles/Schemata/v1.8.1/Level3/NeuroML_Level3_v1.8.1_HTML.xsl

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Converting the file: NaChannel_oldFormat.xml

General notes
Notes present in ChannelML file
ChannelML file containing a single Channel description

Unit system of ChannelML file
This can be either SI Units or Physiological Units (milliseconds, centimeters, millivolts, etc.)
Physiological Units

Ions involved in this channel:

Ion: na
One of the ions involved in this channel. Note that the reversal potential used here is a typical value, it should be determined for each cell type based on ionic concentrations
Charge: 1
Default reversal potential: 50 mV

Channel: NaChannel

NameNaChannel
Status
Status of element in file
Deprecated. File may still work but a new form of some elements is preferred!
Comment: This form of ChannelML (with ohmic and hh_gate elements) should no longer be used. See NaChannel_HH.xml instead.
Contributor: Padraig Gleeson
Description
As described in the ChannelML file
Simple example of Na conductance in squid giant axon. Based on channel from Hodgkin and Huxley 1952
Authors
Translators of the model to NeuroML:
   Padraig Gleeson  (UCL)  p.gleeson - at - ucl.ac.uk
Referenced publicationA. L. Hodgkin and A. F. Huxley, A quantitative description of membrane current and its application to conduction and excitation in nerve, J. Physiol., vol. 117, pp. 500-544, 1952. Pubmed
Reference in NeuronDB Na channels
Current voltage relationship
Note: only ohmic and integrate_and_fire current voltage relationships are supported in current specification
Ohmic
Ion involved in channel
The ion which is actually flowing through the channel and its default reversal potential. Note that the reversal potential will depend on the internal and external concentrations of the ion at the segment on which the channel is placed.
na (default Ena = 50 mV)
Default maximum conductance density
Note that the conductance density of the channel will be set when it is placed on the cell.
Gmax = 120 mS cm-2
Conductance expression
Expression giving the actual conductance as a function of time and voltage
Gna(v,t) = Gmax * m(v,t) 3 * h(v,t)
Current due to channel
Ionic current through the channel
Ina(v,t) = Gna(v,t) * (v - Ena)


Gate: m

The equations below determine the dynamics of gating state m

Gate power3
Gating model formalismHodgkin Huxley single state transition
Expression controlling gate:
dm(v,t) = alpha(v) * (1-m) - beta(v) * m   or   dm(v,t) = inf(v) - m
dt dt tau(v)
   alpha
Form of rate equation for alphaParameterised HH
Expressionalpha(v) = A*(k*(v-d)) / (1 - exp(-(k*(v-d))))    (linoid)
Parameter values A = 1 ms-1
k = 0.1 mV-1
d = -40 mV
Substituted
alpha(v) = 1 * 0.1 * ( v - (-40))
1- e -(0.1 * ( v - (-40)))
   beta
Form of rate equation for betaParameterised HH
Expressionbeta(v) = A*exp(k*(v-d))    (exponential)
Parameter values A = 4 ms-1
k = -0.0555555555 mV-1
d = -65 mV
Substituted beta(v) = 4 * e -0.0555555555 *( v - (-65))
   tau
Expression for tau
tau(v) = 1
alpha(v) + beta(v)
   inf
Expression for inf
inf(v) = alpha(v)
alpha(v) + beta(v)


Gate: h

The equations below determine the dynamics of gating state h

Gate power1
Gating model formalismHodgkin Huxley single state transition
Expression controlling gate:
dh(v,t) = alpha(v) * (1-h) - beta(v) * h   or   dh(v,t) = inf(v) - h
dt dt tau(v)
   alpha
Form of rate equation for alphaParameterised HH
Expressionalpha(v) = A*exp(k*(v-d))    (exponential)
Parameter values A = 0.07 ms-1
k = -0.05 mV-1
d = -65 mV
Substituted alpha(v) = 0.07 * e -0.05 *( v - (-65))
   beta
Form of rate equation for betaParameterised HH
Expressionbeta(v) = A / (1 + exp(k*(v-d)))    (sigmoid)
Parameter values A = 1 ms-1
k = -0.1 mV-1
d = -35 mV
Substituted
beta(v) = 1
1+ e -0.1 * ( v - (-35))
   tau
Expression for tau
tau(v) = 1
alpha(v) + beta(v)
   inf
Expression for inf
inf(v) = alpha(v)
alpha(v) + beta(v)



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